IKW50N65EH5XKSA1 IGBT Transisters INDUSTRIJA 14
♠ Deskrizzjoni tal-Prodott
| Attribut tal-Prodott | Valur tal-Attribut |
| Manifattur: | Infineon |
| Kategorija tal-Prodott: | Transisters IGBT |
| Teknoloġija: | Si |
| Pakkett/Każ: | TO-247-3 |
| Stil tal-Immuntar: | Permezz tat-Toqba |
| Konfigurazzjoni: | Uniku |
| Vultaġġ tal-Kollettur- Emittent VCEO Max: | 650 V |
| Vultaġġ ta' Saturazzjoni ta' Kollettur-Emittent: | 1.65 V |
| Vultaġġ Massimu tal-Emittent Gate: | 20 V |
| Kurrent ta' Kollettur Kontinwu f'25 C: | 80 A |
| Pd - Dissipazzjoni tal-Enerġija: | 275 W |
| Temperatura minima operattiva: | - 40 C |
| Temperatura Operattiva Massima: | + 175 Ċ |
| Serje: | Trenchstop IGBT5 |
| Ippakkjar: | Tubu |
| Ditta: | Teknoloġiji Infineon |
| Kurrent tat-tnixxija tal-gate-emittent: | 100 nA |
| Għoli: | 20.7 mm |
| Tul: | 15.87 mm |
| Tip ta' Prodott: | Transisters IGBT |
| Kwantità tal-Pakkett tal-Fabbrika: | 240 |
| Sottokategorija: | IGBTs |
| Isem kummerċjali: | TRANCHSTOP |
| Wisa': | 5.31 mm |
| Parti # Alias: | IKW50N65EH5 SP001257944 |
| Piż tal-Unità: | 0.213383 oz |
HighspeedH5technologyofferta
•Best-in-Classefficiencyinhardswitchingandresonant topoloġiji
•Plugandplayreplacementofpreviousgeneration IGBTs
•650Vbreakdownvoltage
•LowgatechargeQG
•IGBTcopackedwithfull-rated RAPID1fastandsoftantiparallel diode
•Maximumjunctiontemperature175°C
•Kwalifiki skont l-applikazzjonijiet tal-JEDECfortarget
•Pb-freeleadplating;RoHScompliant
•CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/
•Uninterruptiblepowersupplies
•Solarkonvertituri
•Weldingconverters
•Midtohighrangeswitchingfrequencyconverters
